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AOT3N60 2.5A, 600V N-Channel MOSFET
formerly engineering part number AOT9602
General Description
The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 700V @ 150C ID = 2.5A RDS(ON) < 3.5 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested!
Top View
D TO-220
G G S D S
Absolute Maximum Ratings TA=25C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage 30 Continuous Drain TC=25C 2.5 B Current TC=100C ID 1.6 Pulsed Drain Current Avalanche Current
C C C
Units V V A A mJ mJ V/ns W W/ C C C
o
IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS RJC Typical 54 1.2
8 2 60 120 5 59.5 0.48 -50 to 150 300 Maximum 65 0.5 2.1
Repetitive avalanche energy
Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink Maximum Junction-to-Case D,F
A A
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT3N60
Electrical Characteristics (T J=25C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=1.25A VDS=40V, ID=1.25A 3 4 2.9 2.8 0.64 1 2 8 240 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 25 2.6 2.3 304 31.4 3.3 2.9 9.9 VGS=10V, VDS=480V, ID=2A 2.1 4.6 17 VGS=10V, VDS=300V, ID=2A, RG=25 IF=2.5A,dI/dt=100A/s,VDS=100V 17 24 16 175 1.4 370 38 4 4.5 12 3 6 20 20 30 20 210 1.7 600 700 0.65 1 10 100 5 3.5 V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C
o
Parameter
Conditions
Min
Typ
Max
Units
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=2.5A,dI/dt=100A/s,VDS=100V
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. L=60mH, IAS=2A, VDD=50V, RG=25, Starting TJ=25C 60 Rev 0. July 2008
100
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT3N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 10V 4 3 ID (A) ID(A) 6V 2 1 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 6.0 5.5 Normalized On-Resistance 5.0 RDS(ON) (m) 4.5 4.0 3.5 3.0 2.5 2.0 0 1 2 3 4 5 6 0 -100 -50 0 50 100 150 200 VGS=10V 2 VGS=10V ID=1A 2.5 1 125C 25C 6.5V 10 VDS=40V -55C
VGS=5.5V 0.1 2 4 6 8 10
VGS(Volts) Figure 2: Transfer Characteristics
1.5 1
0.5
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 125C 1.0E+00 1.0E-01 25C 1.0E-02
BVDSS (Normalized)
1.1 IS (A)
60
1
0.9
1.0E-03 1.0E-04 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
0.8 -100
TJ (oC) Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT3N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 VDS=480V ID=2A Capacitance (pF) 1000 Coss 100 10000 Ciss
12
VGS (Volts)
9
6
3
10
Crss
0 0 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 14
1 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100
100
3.00
RDS(ON) limited
10s
Current rating ID(A)
2.50 2.00 1.50 1.00 0.50 0.00 0 25 50 75 100 125 150 TCASE (C) Figure 10: Current De-rating (Note B)
10 ID (Amps)
1ms
1
100s
0.1
TJ(Max)=150C TC=25C
1 10 VDS (Volts) 100
10ms 0.1s DC
0.01 1000
Figure 9: Maximum Forward Biased Safe Operating Area for AOT3N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.45C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Single Pulse Ton
T 10 100
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT3N60 (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT3N60
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VD C
10V
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg Vgs
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on
t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd
-
Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Qrr = - Idt
Vds Vgs Ig
Isd
L
Isd
IF
+
VD C
dI/dt IRM
trr
Vdd Vds
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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